Band-Bending Effect of Low-Temperature GaAs on a Pseudomorphic Modulation-Doped Field-Effect Transistor

Report No. ARL-TR-1933
Authors: Sun, W. D.; Pollak, Fred H.; Folkes, Patrick A.; Gumbs, Godfrey A.
Date/Pages: March 1999; 16 pages
Abstract: Low-temperature photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors with a low-temperature (LT) GaAs layer in the GaAs buffer layer clearly show a decrease in the quantum-well/PL transition energies compared to a structure with no LT GaAs. Self-consistent calculations of the electron and hole band structure confirm that the observed increase in the redshift in PL energies with increasing quantum-well/LT-GaAs spacing can be attributed to band bending induced by the Fermi level pinning at the undoped- GaAs/LT-GaAs interface.
Distribution: Approved for public release
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Last Update / Reviewed: March 1, 1999