Growth and Characterization of ZnCdMgSe/ZnCdSe Quantum Wells on InP substrates for Visible Emitters

Report No. ARL-TR-2015
Authors: Semendy, Fred; Bambha, Neal; Tamargo, Marie C.; Cavus, A.; Zeng, L.
Date/Pages: October 1999; 17 pages
Note: Prepared in cooperation with Department of Chemistry, City College, New York, NY.
Abstract: High-quality lattice-matched quantum well (QW) structures of ZnCdSe/ ZnCdMgSe were grown on InP substrates by molecular beam epitaxy. Emission energies from 2.306 to 2.960 eV were measured by low-temperature photoluminescence for samples with QW thicknesses between 5 and 80 A. Bandgap measurements indicate that these structures could be used in entirely lattice- matched blue, green, and yellow diode laser structures. Experimental measurements indicated that these structures have very little strain; hence, these materials could possibly be less prone to degradation than the current II- VI blue-green lasers grown on GaAs substrates.
Distribution: Approved for public release
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Last Update / Reviewed: October 1, 1999