A Conformal-Mapping Treatment of the Effect of a Semi-Infinite Gate on a Two-Dimensional Electron Gas.

Report No. ARL-TR-2153
Authors: Frank J. Crowne
Date/Pages: August 2000; 19 pages
Abstract: A pinched-off high-electron-mobility transistor containing a perfectly conducting two-dimensional electron gas (2DEG) is described mathematically within an idealized two-dimensional geometry, so that conformal mapping techniques can be used to compute internal fields at the transistor drain. The field and charge distribution at the drain end of the 2DEG calculated in this way suggest that the charge is a nonmonotonic function of position in this region.
Distribution: Approved for public release
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Last Update / Reviewed: August 1, 2000