Sample Preparation Procedure for TEM Imaging of Semiconductor Materials

Report No. ARL-TR-3223
Authors: Wendy L. Sarney
Date/Pages: June 2004; 15 pages
Abstract: Transmission electron microscopy (TEM) allows detailed materials characterization at high resolutions. Lattice imaging requires the preparation of electron transparent samples. Preparing such thin samples without changing the characteristics of the material is not a trivial process. The Electro-Optics & Photonics Division (EO&P) of the Army Research Laboratory uses TEM for structural characterization of MBE-grown semiconductor materials. Major projects that rely on TEM include the following structures: type-II superlattices, quantum well and quantum dot superlattices, II-VI films, and GaN-based structures.. TEM analysis provides the grower with high and low resolution images of the interfaces, surfaces, and defects. This report discusses the typical preparation procedures used to fabricate TEM samples.
Distribution: Approved for public release
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Last Update / Reviewed: June 1, 2004