Design and Test Evaluation of SiC Diode Modules

Report No. ARL-TR-3222
Authors: Timothy E. Griffin and M. Gail Koebke
Date/Pages: May 2004; 43 pages
Abstract: Two high-temperature modules, one of p-i-n SiC diodes and one of junction barrier Schottky SiC diodes, were fabricated on A1N. Material choice, thermal conductivity, compatibility, design, and performance are discussed. A curve tracer measured each diode on a module for forward and reverse current versus voltage. Diodes in parallel were measured for reverse recovery charge and time, at different currents and to 150 degrees C substrate, including operation in a DC-to-DC converter. A silicone overcoat permitted testing the p-i-n to the rated 1200-V reverse.
Distribution: Approved for public release
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Last Update / Reviewed: May 1, 2004