Design and Fabrication of 850 and 980 nm Vertical Cavity Surface Emitting Laser

Report No. ARL-TR-3187
Authors: N. C. Das, H. Hsen, P. Newman, M. T. Lara, and W. Chang
Date/Pages: March 2004; 22 pages
Abstract: Vertical-cavity surface-emitting lasers (VCSEL) are the most suitable light sources for certain optoelectronic applications because of their planner nature of light emission. VCSELs on GaAs substrates were grown by the molecular beam epitaxy technique. In this report we present detailed procedures to design and fabricate 850-nm top-emitting and 980-nm bottomemitting VCSELs. First a test structure was grown by the molecular-beam epitaxy (MBE) technique and was characterized by reflectance and photoluminescence techniques. We used a wet oxidation process for current confinement in the laser structure. The VCSELs have low threshold current, low voltage drop and hence are suitable for hybridization onto silicon MOS circuits.
Distribution: Approved for public release
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Last Update / Reviewed: March 1, 2004