Spin-Polarized Tunneling at Interfaces Between Oxides and Metals or Semiconductors

Report No. ARL-TR-3925
Authors: Douglas J. Strand
Date/Pages: September 2006; 50 pages
Abstract: Spin-polarized tunneling is a way to create a new type of electric current whose two driving forces are spin momenta rather than opposite charges. Much research has been done with this idea and that research has been reviewed and developed to propose an experimental program to use this new type of current to devise such electronic devices as the Datta-Das spin field-effect transistor (SFET), the magnetic bipolar transistor, the hot-electron spin transistor, and the spin-valve photo-diode. This report includes a short history of spin-polarized transport and then outlines the developed theory. The experimental methods and materials of the field are also discussed. This research proposes to use electron paramagnetic resonance (EPR) and Barkhausen Noise Analysis (BNA) with other standard methods of materials science and engineering to examine the feasibility and develop an experimental plan to make spin-polarized transport effective for the manufacture of the above named devices. Some materials will be effective for spin-polarized transport devices and some will not. The quest for the effective materials is a major part of this research. Half-Heusler and full-Heusler alloys are studied as possible candidates for the devices. The term spintronics, an acronym for spin electronics, is used almost synonymously with spin polarization transport devices.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2006