Surface Analysis of Reactive Ion Etched PZT Thin Films in SF6 Plasma

Report No. ARL-TR-4284
Authors: Eugene Zakar
Date/Pages: September 2007; 16 pages
Abstract: Reactive ion etching of sol-gel deposited Pb(ZrO.52 Ti0.48)03 thin films was performed in SF6 plasmas. Etch rate was determined as a function of cathode power and chamber pressure, attaining a value of 65 nm/min at 300 W. Auger electron spectroscopy measurements revealed an excess Pb 10 nm thin layer on as-deposited film surfaces. X -ray photoelectron spectroscopy measurements showed the existence of ZrF4 and PbS04 species on etched surfaces, in addition to traces of S and F. These measurements also indicated that Ti is relatively easy to remove while Pb removal is the rate limiting step in the etch process.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2007