Fabrication and Characterization of Schottky Diodes using Single Wall Carbon Nanotubes

Report No. ARL-TR-4534
Authors: Brandon E. Luquette and Barbara M. Nichols
Date/Pages: August 2008; 16 pages
Abstract: Schottky diodes using single wall carbon nanotubes (SWNTs) were fabricated using palladium and aluminum source and drain contacts, respectively. SWNTs were grown on high resistivity silicon substrates with a thermal oxide layer using chemical vapor deposition and ferric nitrate catalyst. Multiple cleanroom processing steps were used to make the diodes which included the deposition of marker layers, oxygen plasma etch for selective nanotube removal, and electron beam evaporation of metal electrodes in two separate depositions. The diodes were designed in a coplanar waveguide (CPW) transmission line topology in order to facilitate RF testing. Electrical testing at the DC level was accomplished. Further investigation into the RF characterization of carbon nanotubes will allow for the incorporation of such devices into integrated circuit architectures.
Distribution: Approved for public release
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Last Update / Reviewed: August 1, 2008