Characterization of Multi Temperature and Multi RF Chuck Power Grown Silicon Nitride Films by PECVD and ICP Vapor Deposition

Report No. ARL-TR-5105
Authors: F. Semendy, N. Mark, S. Farrell, and G. P. Meissner
Date/Pages: March 2010; 20 pages
Abstract: Silicon Nitride thin films were grown at 100, 150, 200, and 250 °C and at rf-power of 30, 40, 50, and 60 Watts by plasma enhanced chemical deposition (PECVD) and inductive coupled plasma (ICP) chemical vapor deposition using 450 W microwave power. The silicon nitride films were deposited on a n-type (100) 4 silicon wafer with 1-20 Ω cm resistivity. The optical, physical, and electrical properties were systematically investigated. Extensive analysis were conducted using Wollam Specrtroscopic Ellipsometer, FTIR, and AFM. The temperature of deposition and rf-power played important role in the physical and optical properties of the film. Similarly the index of refraction increased with increasing deposition temperature. Silicon nitride stretching characteristic peaks Si-N, N-H, Si-H, and N-H have been observed with significant intensities as observed by FTIR spectroscopy especially in the case of the film grown under various temperatures. For the first time the results obtained from the growth of silicon nitride using PECVD and ICP under conditions, we conclude that the ICP grown films are of superior quality.
Distribution: Approved for public release
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Last Update / Reviewed: March 1, 2010