A Geometrically Non-linear Model of Ceramic Crystals with Defects Applied to Silicon Carbide (SiC)

Report No. ARL-TR-5096
Authors: John D. Clayton
Date/Pages: March 2010; 24 pages
Abstract: A model is developed for anisotropic ceramic crystals undergoing potentially large deformations that can occur under significant pressures or high temperatures. The model is applied to enable an improved understanding of silicon carbide (SiC), with a focus on hexagonal polytype 6H of a-SiC. Incorporated in the model are the following features: non-linear anisotropic thermoelasticity, piezoelectricity and electrostriction, nucleation and glide of Shockley partial dislocations on the basal plane, dilatation from point defects and elastic fields of dislocation lines, and cleavage fracture. Physical properties are obtained from experimental data and calculations reported in the literature.
Distribution: Approved for public release
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Last Update / Reviewed: March 1, 2010