A Top-down Method to Fabricate Silicon Nanopillars

Report No. ARL-TR-5500
Authors: Joshua B. Ratchford, Nelson Y. Mark, Madhu Roy, William L. Benard, and Cynthia A. Lundgren
Date/Pages: March 2011; 14 pages
Abstract: We report a method to fabricate silicon nanopillars with high-aspect ratios. Electron-beam lithography and a negative resist were used to pattern nanometer scale etch masks onto silicon wafers. Inductively coupled plasma-reactive ion etching (ICP-RIE) with mixtures of Cl2 and HBr was used to etch nanostructures into the wafers. Silicon nanopillars with tip diameters of 80 nm and aspect ratios of 10 were readily obtained.
Distribution: Approved for public release
  Download Report ( 0.267 MBytes )
If you are visually impaired or need a physical copy of this report, please visit and contact DTIC.

Last Update / Reviewed: March 1, 2011