Low Cost, High Performance Avalanche Photodiodes for Enabling High Sensitivity Bio-fluorescence Detection (First Year of a Two-year Program)

Report No. ARL-MR-5528
Authors: Anand V. Sampath and Michael Wraback
Date/Pages: April 2011; 24 pages
Abstract: In this report we discuss the modeling, fabrication, and characterization of novel ultraviolet separate absorption and multiplication avalanche photodiodes (SAM-APDs) employing a gallium nitride (GaN) absorption region and a 4H-silicon carbide (SiC) multiplication region. We demonstrate the importance of polarization induced interface charge on the electric field distribution within the quantum efficiency of this device. In addition, we show that the total interface charge can be controlled for optimal detector performance through the use on an interface charge control layer. Finally, we report on the fabrication and testing of GaN/SiC SAM-APDS grown by plasma-assisted molecular beam epitaxy.
Distribution: Approved for public release
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Last Update / Reviewed: April 1, 2011