Thermal Simulations of a Silicon Carbide Super Gate Turn-off (SGTO) with Pulsed Power Cycles

Report No. ARL-MR-0827
Authors: Gregory K. Ovrebo
Date/Pages: August 2012; 24 pages
Abstract: We have performed computer simulations of thermal effects in a silicon carbide (SiC) super gate turn-off (SGTO) thyristor caused by short high-power pulses. We used two power pulses of different widths, repeated in multiple duty cycles, as inputs to our model. We used finite element analysis to calculate temperatures in and around the SiC dies during application of the power pulse and in the period between pulses.
Distribution: Approved for public release
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Last Update / Reviewed: August 1, 2012