Anti Reflection (AR) Coating for Indium Gallium Nitride InGaN Solar Cells

Report No. ARL-TR-6124
Authors: N. C. Das, M. L. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, M. Iza, S. C. Cruz, J. R. Lang, N. G. Young, Y. Terao, C. J. Neufeld, S. Keller, S. Nakamura, S. P. DenBaars, U. K. Mishra
Date/Pages: August 2012; 16 pages
Abstract: This report describes enhanced solar energy harvesting using an optimized anti reflection (AR) coating consisting of a double layer stack of silicon dioxide (SiO2) and silicon nitride (Si3N4) films. First, we made theoretical calculations for the minima of reflection curves and then performed experiments with different thicknesses of SiO2 and Si3N4 layers. The low temperature SiO2 and Si3N4 films were produced by low pressure chemical vapor deposition (LPCVD). Our experimental results agree qualitatively with the theoretical findings. The optimized SiO2 and Si3N4 layers were 500 and 750 Å, respectively. We also observed an increase of transmission in ultraviolet (UV) region from 75% for a indium gallium nitride (InGaN) substrate without AR coating to greater than 90% for the same layer with AR coating. By using an optimized AR coating we observed a 20% increase in InGaN solar cell efficiency.
Distribution: Approved for public release
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Last Update / Reviewed: August 1, 2012