Minority Carrier Lifetime and Interfacial Recombination Velocity in GaAs/AlGaAs Double Heterostructures

Report No. ARL-TR-6186
Authors: P. A. Folkes, B. Connelly, and F. Towner
Date/Pages: September 2012; 16 pages
Abstract: A novel technique is used to determine the minority carrier lifetimes, the interface recombination velocity, the internal radiative quantum efficiency, and the radiative recombination constant from PL decay measurements on a set of three samples and published theory. This technique is used to determine for the first time the minority carrier lifetimes of p-GaAs in double heterostructures that were grown by molecular beam epitaxy (MBE) at ARL. The results show the high quality of our bulk GaAs and the GaAs/AlGaAs interface in double heterostructure samples, and provide guidance for studies aimed at improving the quality of GaAs grown by MBE at the U.S. Army Research Laboratory (ARL).
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2012