Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers

Report No. ARL-TR-6278
Authors: John E. Penn
Date/Pages: December 2012; 34 pages
Abstract: A broadband power amplifier design approach was used to design several monolithic microwave integrated circuits (MMICs) using a 0.13-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of these circuits were performed as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author. The design approach is taught by Dale Dawson in the JHU Power MMIC Design Course. This approach is useful for designing relatively broadband amplifiers that are limited only be the active transistor's "Q".
Distribution: Approved for public release
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Last Update / Reviewed: December 1, 2012