Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design

Report No. ARL-TR-6237
Authors: ARL-TR-6237
Date/Pages: October 2012; 28 pages
Abstract: A very broadband distributed amplifier was designed using a 0.13-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of this circuit was performed as part of the fall 2011 Johns Hopkins University Monolithic Microwave Integrated Circuit (MMIC) Design Course, taught by the author. The design approach is applicable to very broadband, low noise MMICs that could be used for a variety of radio frequency (RF) and microwave systems.
Distribution: Approved for public release
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Last Update / Reviewed: October 1, 2012