Preparation of Copper (Cu)-Nickel (Ni) Alloy Thin Films for Bilayer Graphene Growth

Report No. ARL-TR-7593
Authors: Andrew Chen, Eugene Zakar, and Robert Burke
Date/Pages: February 2016; 18 pages
Abstract: Co-sputtered copper (Cu)-nickel (Ni) alloys with layered thin-film ratios of 6:1, 4:1, and 3:1 were developed for use as a catalyst for the growth of graphene. A design of experiments was initiated with 3 tasks to complete: 1) metal preparation designed to achieve preferred (111) oriented films, 2) alloying of the layered films, and 3) the synthesis of AB-stacked quality bilayer graphene via low-pressure chemical vapor deposition (LPCVD). This report covers the analysis of the first 2 tasks by revealing the detailed morphological changes in the metal surfaces such as roughness, grain size, and crystal orientation due to the effects of annealing temperature, hydrogen (H2)/argon (Ar) gas ratio, and pressure. These variables are expected to have a major impact on the growth of graphene for different Cu-Ni thin-film concentrations.
Distribution: Approved for public release
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Last Update / Reviewed: February 1, 2016