The Effects of Postprocessing on Physical and Solution Deposition of Complex Oxide Thin Films for Tunable Applications

Report No. ARL-TR-7594
Authors: Eric Ngo; Mat Ivill; Samuel Hirsh; C Hubbard; MW Cole; Daniel Shieber
Date/Pages: February 2016; 20 pages
Abstract: Thin barium strontium titanate (BST) films are being developed as dielectric film for use in tunable radio frequency (RF)/microwave applications. Thin BST film capacitor devices were fabricated using physical and chemical solution deposition techniques. The typical dielectric constant of the physical deposition via RF magnetron sputtering film capacitors was in the range of 480–780 and had dissipation factors between 0.01 to 0.06 with conventional annealing. After the effect of postamalgamate processing technique via photon ultraviolet (UV) irradiation annealing, these losses showed further improvement. In addition, BST films processed via solution metal organic spin deposition, which yield a lower dielectric range of 150–335, also showed improved loss with UV processing from 0.014 to 0.010 while effectively maintaining desirable electrical properties. The dielectric properties of these films had little dependence on frequencies from 100 KHz to 1 MHz. The physical properties revealed that the thin films are crystalline with no evidence of any secondary phases.
Distribution: Approved for public release
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Last Update / Reviewed: February 1, 2016