Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09-??m High-Electron-Mobility Transistors (HEMTs) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

Report No. ARL-TN-0743
Authors: John E Penn
Date/Pages: March 2016; 16 pages
Abstract: Microwave integrated circuits are essential for wireless communication and networking systems. At the high frequencies of approximately 30 to 45 GHz, monolithic microwave integrated circuits (MMICs) are essential for compact hand-held satellite communications systems that provide instant, secure data and voice links in remote global regions. Small, efficient electronic components are needed for these, often battery powered, communications systems. The US Army Research Laboratory has designed several high-performance circuits and submitted them to fabrication using a prerelease research 0.09-μm gallium nitride (GaN) process under a cooperative research agreement with Qorvo. GaN integrated circuits have significantly increased power densities for MMICs over previous technologies, such as gallium arsenide and other III/V devices. GaN devices also offer high-power survivability and robust performance for low noise receivers.
Distribution: Approved for public release
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Last Update / Reviewed: March 1, 2016