Alternative Solder Bond Packaging Approach for High-Voltage (HV) Pulsed Power Devices

Report No. ARL-TR-7830
Authors: Aderinto Ogunniyi, Gail Koebke, Heather O?Brien, and Oladimeji Ibitayo
Date/Pages: September 2016; 26 pages
Abstract: The silicon carbide (SiC) "super" gate-turn-off thyristor (SGTO) device is a superior switching component of interest to the US Army for various pulsed power applications. This research presents a modified power packaging approach for enhancing a pulsed power device's reliability and performance under extreme pulsed switching conditions critical to Army-specific applications. The power package implemented on the SiC SGTO is solder-based, which mitigates the mechanical strain on the die surface metallization. This packaging design eliminates wire bonds on the anode area of the SiC SGTO, which reduces total stray inductance and the total on-resistance of the packaged SiC SGTO device. This report details the optimized pulsed power packaging approach and the pulse evaluation circuit used to evaluate a SiC SGTO device under extreme pulsed current switching conditions.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2016