Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin

Report No. ARL-TR-7838
Authors: P Folkes, P Taylor, C Rong, B Nichols, H Hier, and M Neupane
Date/Pages: September 2016; 16 pages
Abstract: Thin layers of single-crystal, epitaxial semiconductor tin (α-Sn) were grown by molecular beam epitaxy (MBE) on cadmium telluride (CdTe) substrates. X-ray diffraction and Raman scattering measurements confirm that the thin layers of α-Sn are slightly strained, which supports theoretical prediction that α-Sn is a 3-D topological insulator (TI). Future studies will aim at the growth of α-Sn with improved transport characteristics using high-quality CdTe buffer layers, studies of the 3-D TI characteristics of α-Sn, and the MBE growth of stanene.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2016