Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016

Report No. ARL-TR-7913
Authors: Bryan H Zhao, Michael A Derenge, Milena B Graziano, and Randy P Tompkins
Date/Pages: December 2016; 20 pages
Abstract: In this technical report, we report recent (FY2016) progress on the vertical Schottky diodes (SDs) on a bulk gallium nitride (GaN) substrate. The newly obtained functionality of the Micromanipulator P200L Semiautomatic Probing Station coupled with our existing Agilent 4155C Semiconductor Parameter Analyzer is also summarized. Vertical GaN SDs were fabricated on a true bulk single crystal GaN substrate grown using the ammonothermal growth technique. To investigate the electrical performance of the SDs as a function of diode size, circular diodes ranging from 50 to 300 μm in diameter were fabricated and tested. Forward I-V results suggest that the sample has high resistivity as no forward conduction was observed for all devices tested. Additionally, results show variation in the diode breakdown voltage with diode size, but no clear trend between breakdown voltage and diode size was observed.
Distribution: Approved for public release
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Last Update / Reviewed: December 1, 2016