Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs

Report No. ARL-TR-8180
Authors: John E Penn
Date/Pages: October 2017; 26 pages
Abstract: The US Army Research Laboratory is exploring devices and circuits for radio frequency communications, networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high-power monolithic microwave integrated circuit amplifiers are extremely important in any system that must operate reliably and efficiently in continually crowded spectrums, with multiple purposes for communications, networking, and radar. This report describes the design of a broadband Class A/B power amplifier using Raytheon's high-frequency, efficient, gallium nitride on 4-mil silicon carbide process. While this design was not part of the initial wafer fabrication for the original effort, it could be finalized and fabricated at a future date.
Distribution: Approved for public release
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Last Update / Reviewed: October 1, 2017