Thermal Simulation of a Silicon Carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT) in Continuous Switching Mode

Report No. ARL-MR-0973
Authors: Gregory Ovrebo
Date/Pages: April 2018; 16 pages
Abstract: Thermal simulations were used to calculate temperatures in a silicon carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT),simulating device operation in a DC-DC power converter switching at a frequency of up to 15 kHz. Calculations alsoestimated the effect of solder layers on temperature in the device.
Distribution: Approved for public release
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Last Update / Reviewed: April 1, 2018