Physical Vapor Deposition of Low-Cost Ceramic Armor Device for US Army Low-Dielectric Application

Report No. ARL-TR-8393
Authors: Eric Ngo; Matthew Ivill; Samuel Hirsh; Clifford Hubbard; Thomas Parke; Daniel Shreiber; John Carroll; Govind Mallick;
Date/Pages: June 2018; 19 pages
Abstract: In this report, boron carbide nitride (BCN) thin film is explored for its structural and electrical properties as an alternative to, and potential replacement for, silicon dioxide as interlayer dielectric (ILD) materials. Physical vapor deposition (PVD) of BCN films were prepared by RF sputtering from a stoichiometric boron carbide target and deposited on blank and metallized electrode sapphire to create parallel capacitance structures. Two different gas mixture ratios of argon:nitrogen (Ar:N2) were used for deposition. Discussed in this report are the electrical characterization of BCN, including dielectric constant, current versus voltage curves, and dielectric breakdown voltage characteristics extracted from the semiconductor system. A gas mixture of Ar:N2 80:20 produced films with a surface roughness of 5.6 nm and a dielectric constant of 3.7 at 1.0 MHz. The dielectric constant decreased by 30% as the nitrogen concentration was reduced from 80:20 to 90:10 ratio of Ar:N2, respectively. Additionally, the BCN 80:20 film achieved a resistivity of 1.33 x 108 ohm-cm while the dielectric breakdown voltage exceeded 25 MV/m, showing that BCN is suitable for low-κ-dieletric ILD applications.
Distribution: Approved for public release
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Last Update / Reviewed: June 1, 2018