Summary of Inductive SiC BJT Switching

Report No. ARL-TR-3678
Authors: Steven L. Kaplan
Date/Pages: November 2005; 18 pages
Abstract: Significant development of silicon carbide (SiC) for device applications allows its uniquely favorable properties to be exploited in circuit designs. The 4H-SiC structure has several characteristics that provide optimal speed and power handling. These include wide bandgap (3 cV), high dielectric breakdown (3.5 MV/cm), and high thermal conductivity (5 W/cm-K) [1]. By combining these properties, SiC bipolar junction transistors can achieve fast switching at high voltages (1.2 kV). New generation devices are also being developed with increased current handling capability (above 10 A). However, in order to meet the power handling requirements of FCS systems, such as hybrid-electric vehicle (HEV) power conditioning, it is necessary to configure these devices in parallel and validate their operation at high temperatures (package temperatures of 90 ?C, and junction temperatures to over 150 ?C). This report documents experimental characterization of SiC BJTs fabricated by CREE in various applications, including parallel switching. The results presented here indicate that SiC is well suited to meet these goals.
Distribution: Approved for public release
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Last Update / Reviewed: November 1, 2005