Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor

Report No. ARL-TR-3993
Authors: Timothy E. Griffin
Date/Pages: November 2006; 30 pages
Abstract: The incremental capacitance C was measured for a silicon carbide (SiC) Schottky diode during a reverse-biasing pulse and for two SiC n-MOS transistors during a negative pulse to their source with the drain grounded. C was measured as a function of pulsed voltage to 600 V, and on a gain-phase analyzer as a function of frequency and bias voltage to 40 V.
Distribution: Approved for public release
  Download Report ( 1.747 MBytes )
If you are visually impaired or need a physical copy of this report, please visit and contact DTIC.
 

Last Update / Reviewed: November 1, 2006