Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes

Report No. ARL-TR-4545
Authors: P.A. Folkes, J. Little, S. Svensson, and K. Olver20
Date/Pages: September 2008; 20 pages
Abstract: We report the results of a study of the temperature-dependent photoluminescence (PL) and leakage current characteristics of a set of type II indium arsenide (InAs)-gallium antimonide (GaSb) superlattice (SL) photodiode structures. We find that the PL efficiency of high-quality structures is determined by Shockley-Read and trap-assisted tunneling nonradiative recombination processes. Our results suggest a possible correlation between trap-assisted tunneling in some SL structures and an anomalous decrease in the PL efficiency with increasing temperature over the range 40-78 K, and provide insight into the effect of defects and SL homogeneity on the PL and transport characteristics of the photodiodes.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2008