Effects of Differing Carbon Nanotube Field-effect Transistor Architectures

Report No. ARL-TR-4883
Authors: Andrew M. Dorsey and Matthew H. Ervin
Date/Pages: July 2009; 22 pages
Abstract: Single-walled carbon nanotube field-effect transistors (SWCNTFETs) were fabricated with varying device architectures. Variations on the standard back-gated architecture included varying the gate oxide material and thickness, changing source and drain contact metallization, suspending the carbon nanotubes to minimize interaction with the gate oxide, and fabricating a topgated architecture employing a thin layer of aluminum oxide (Al2O3) as the gate oxide. Devices were characterized and compared to each other based on the CNTFET properties of noise, hysteresis, sub-threshold slope, and threshold voltage. Results show that some properties of the CNTFET, such as hysteresis and noise can be modified; other properties, however, are intrinsic to the CNT.
Distribution: Approved for public release
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Last Update / Reviewed: July 1, 2009