Rare-earth Doped GaN - An Innovative Path Toward Areascalable Solid-state High Energy Lasers Without Thermal Distortion (2nd year)

Report No. ARL-TR-5213
Authors: Michael Wraback and Mark Dubinskiy
Date/Pages: June 2010; 28 pages
Abstract: In situ neodymium (Nd) doping of gallium nitride (GaN) and aluminum nitride (AlN) by plasma-assisted molecular beam epitaxy (PA-MBE) has been demonstrated for the first time. For GaN, Nd doping as high as ~8 at.% has been demonstrated, with no evidence of phase segregation identified by x-ray diffraction (XRD) for Nd up to ~1 at.%. The strongest roomtemperature luminescence was observed for a doping level between 0.1-1 at.%. The Stark energy levels of the three characteristic Nd emission multiplets were resolved by photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy. The enhanced substitutional doping at the gallium (Ga) site and low optical loss in waveguide structures suggests that GaN:Nd may have significant potential for use in simple, area-scalable, room-temperature, diode-pumped solidstate high energy lasers (HELs). Next-generation devices may be able to take advantage of the improved thermal conductivity of an AlN host.
Distribution: Approved for public release
  Download Report ( 0.583 MBytes )
If you are visually impaired or need a physical copy of this report, please visit and contact DTIC.
 

Last Update / Reviewed: June 1, 2010