Graphene-based Nanoelectronics

Report No. ARL-TR-5451
Authors: Dr. Osama M. Nayfeh, Mr. Matthew Chin, Dr. Matthew Ervin, Dr. James Wilson, Dr. Tony Ivanov, Dr. Robert Proie, Dr. Barbara M. Nichols, Dr. Frank Crowne, and Dr. Stephen Kilpatrick
Date/Pages: February 2011; 46 pages
Abstract: A large program in graphene-based nanoelectronics has been initiated at the U.S. Army Research Laboratory (ARL) under the auspices of the ARL Director's Strategic Initiative (DSI). An array of capabilities for graphene growth, characterization, device fabrication, and device modeling has been established, and expertise has been gained in all facets of the research. Significant results have been achieved, including the world's highest reported fT for a graphene field-effect transistor (GFET) fabricated from chemical vapor deposition (CVD)-grown graphene; and a first-generation graphene-based supercapacitor. This research could potentially have enormous benefits for the American Soldier including smaller and more efficient power electronics and communication systems, transparent and flexible electronics, and wearable electronics.
Distribution: Approved for public release
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Last Update / Reviewed: February 1, 2011