Physics-based Modeling of a Graphene-loaded Capacitor

Report No. ARL-TR-5481
Authors: Frank J. Crowne
Date/Pages: March 2011; 34 pages
Abstract: In this report a mathematical model is developed for a capacitor containing a monolayer of graphene. The model can be used in a zero-order description of the terminal structure of a graphene field-effect transistor in which the gate-source and gate-drain connections are replaced by capacitances, a standard approximation used in the modeling of ordinary MOSFETs. The analysis leads to mathematical expressions for the charge density in the graphene channel. Whereas in a previous report (ARL-TR-5281) the author finessed this aspect of the transistor modeling by using an empirical model for the channel charge density, the density calculated here includes atomistic properties of the graphene layer. The treatment also allows nonlinear effects-i.e., varactor action-to be studied, which indicate that the graphene-loaded capacitor is an interesting device in its own right.
Distribution: Approved for public release
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Last Update / Reviewed: March 1, 2011