Development of 6.1 A Materials for IR Applications (Second-year Report)

Report No. ARL-TR-5855
Authors: Gregory Brill and Yuanping Chen
Date/Pages: December 2011; 26 pages
Abstract: The development of mercury cadmium selenide (HgCdSe) material for infrared (IR) applications was initiated in fiscal year 2010 (FY10) at the U.S. Army Research Laboratory (ARL) under a Directors Research Initiative (DRI) program. Material growth conditions using molecular beam epitaxy (MBE) were identified to achieve reasonably good material quality in terms of surface morphology, defect density, and crystallinity as measured by x-ray diffraction. Additionally, it was determined that the bandgap of HgCdSe could be tuned by controlling the selenium (Se) to cadmium (Cd) flux ratio during growth. This research has continued in fiscal year 2011 (FY11) with an emphasis placed on developing composite substrate technology (zinc telluride [ZnTe]/silicon [Si] and Zn(Se)Te/gallium antimonide [GaSb]) for HgCdSe as well as understanding the electrical properties of HgCdSe material. An etching process was developed to identify dislocations in HgCdSe. Finally, the continued study of MBE growth parameters and their impact on material properties was conducted.
Distribution: Approved for public release
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Last Update / Reviewed: December 1, 2011