Graphene-based Nanoelectronics (FY11)

Report No. ARL-TR-5873
Authors: Madan Dubey, Raju Nambaru, Marc Ulrich, Matthew Ervin, Barbara Nichols, Eugene Zakar, Osama M. Nayfeh, Matthew Chin, Glen Birdwell, Terrance ORegan, Tony Ivanov, and Robert Proie
Date/Pages: January 2012; 76 pages
Abstract: A large program in graphene-based nanoelectronics has continued at the U.S. Army Research Laboratory (ARL) under the auspices of the ARL Director's Strategic Initiative (DSI). An array of capabilities for graphene growth, characterization, device fabrication, and device modeling has been established, and expertise has been gained in all facets of this research. Significant results have been achieved, including growth of single-, bi-, and few-layer graphene; development of a graphene transfer process; development of atomic layer deposition of dielectrics for graphene devices; and the modeling, designing, and fabricating of graphene-based field effect transistors with radio frequency (RF) performance up to 3 GHz. This research could potentially have enormous benefits for the American Soldier including smaller and more efficient power electronics and communication systems, transparent and flexible electronics, and wearable electronics.
Distribution: Approved for public release
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Last Update / Reviewed: January 1, 2012