Heterogeneous Architectures Incorporating Nitride Semiconductors for Enhanced Functionality of Optoelectronic Devices (FY11)

Report No. ARL-TR-5902
Authors: Anand V. Sampath, Meredith L. Reed, Michael Gerhold, and Michael Wraback
Date/Pages: January 2012; 44 pages
Abstract: Heterogeneous devices combine dissimilar materials with complementary device functionalities to achieve new functionalities that may provide revolutionary advances in technology. In these novel devices, the physics and engineering of the interface of the dissimilar materials plays a critical role and requires considerable research. This program investigates the heterogeneous integration of III-Nitride semiconductors with materials having dissimilar polarization, band gap, or crystal structure to realize optoelectronic devices that have enhanced capabilities not achievable using either material system individually. In the first year of this program, this effort has focused on four examples: (1) III-Nitride/silicon carbide (SiC) separate absorption and multiplication avalanche photodiodes, (2) III-Nitride/magnesium zinc oxide (MgZnO) hybrid near ultraviolet laser diodes, (3) heterogeneous III-Nitride terahertz optoelectronic devices, and (4) silicon solar cells incorporating a III-Nitride semiconductor active window.
Distribution: Approved for public release
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Last Update / Reviewed: January 1, 2012