1000-Hour Reliability Study of a 1200-V, 880-A All-Silicon Carbide (SiC) Dual Module

Report No. ARL-TR-6146
Authors: Robert A. Wood and Thomas E. Salem
Date/Pages: September 2012; 30 pages
Abstract: The commercial availability of silicon-carbide (SiC) power devices began over a decade ago with the introduction of SiC diodes and has expanded in complexity the past few years to include SiC transistors and power modules. Research efforts continue to develop the manufacturability and device performance to extend the capabilities of this burgeoning technology. Recently, the performance and characterization of a 1200-V, 800-A all-SiC dual module has been reported. This report expands on the previous work by presenting details and results obtained from a long-term reliability study of a similarly rated module. The module has successfully operated in an experimental circuit at a switching frequency of 10 kHz while running vehicle load profiles for over 1,000 h and exhibited little change in device characteristics. The 1,000 h of circuit operation represents 11,783 mi of use or over half of the expected lifecycle in a vehicle traction inverter.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2012