0.15-μm Gallium Nitride (GaN) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication

Report No. ARL-TN-0496
Authors: John Penn
Date/Pages: September 2012; 18 pages
Abstract: High-speed electronic circuits are needed for Army systems in communications, wireless sensors, imaging, and other systems. Gallium nitride (GaN) technology offers the highest power densities for radio frequency (RF) and wireless integrated circuits. Several GaN broadband high power efficient power amplifier designs for high frequency operation, such as satellite communications (SATCOM), were recently designed and submitted for fabrication using a proprietary 0.15-μm GaN process under development at TriQuint Semiconductor. These monolithic microwave integrated circuits (MMICs) are being fabricated by TriQuint as part of a recent cooperative research and development agreement (CRADA) with the U.S. Army Research Laboratory (ARL).
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2012