Low-Cost Lattice Matching Zn(Se)Te/Si Composite Substrates for HgCdSe and Type-2 Superlattices

Report No. ARL-TR-6642
Authors: Yuanping Chen
Date/Pages: September 2013; 24 pages
Abstract: Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 Å, such as HgCdSe and GaSb-based type-II strained-layer superlattices. In this report, we present our findings on the systematic studies of MBE growth parameters for both ZnTe(211) on Si(211) and ZnTe(100) on Si(100). Optimal MBE growth procedures have been established for producing ZnTe/Si wafers with high crystallinity, low defect, and etch pits densities, as well as excellent surface morphology. Using this baseline MBE growth process, we obtained 3-in ZnTe(211)/Si and ZnTe(100)/Si wafers with X-ray full-width at half-maximum (FWHM) as low as 70 and 103 arcsec, respectively.
Distribution: Approved for public release
  Download Report ( 1.133 MBytes )
If you are visually impaired or need a physical copy of this report, please visit and contact DTIC.
 

Last Update / Reviewed: September 1, 2013