Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH)

Report No. ARL-TR-6660
Authors: P. Folkes, H. Hier, B. VanMil, B. C. Connelly, and W. Beck
Date/Pages: September 2013; 18 pages
Abstract: In this report, we present results of an ongoing study aimed at measuring and optimizing the nonradiative lifetime and the internal radiative quantum efficiency of molecular beam epitaxy (MBE)-grown gallium arsenide (GaAs) solar cells that are grown at the U.S. Army Research Laboratory (ARL) using different substrate growth temperatures and arsenic (As)/gallium (Ga) flux ratios to determine the growth parameters that maximize the bulk GaAs minority carrier nonradiative lifetime. We report a significant increase in the nonradiative lifetime and the internal radiative quantum efficiency of MBE-grown GaAs/aluminum gallium arsenide (AlGaAs) double heterostructure (DH) structures grown at ARL with a growth temperature of 595 °C and an As/Ga flux ratio = 15. Our results show that the nonradiative lifetime and internal radiative quantum efficiency of the DH structures grown using these parameters are comparable to those of the highest quality reported MBE-grown GaAs.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2013