Identification and Mapping of Mechanically Exfoliated 1H-MoS2 Flakes for Field-Effect Transistors

Report No. ARL-TR-7021
Authors: Mariela Georgieva and Terrance O'Regan
Date/Pages: August 2014; 20 pages
Abstract: Following the discovery of graphene, there has been increased interest in materials that allow for the construction of two-dimensional (2D) devices. In this project we will focus on 1H-molybdenum disulfide (MoS2), which, like graphene, is a monolayer; unlike graphene, however, it has a band gap. 1H-MoS2 differs from silicon in that its band gap is direct and, like graphene, can be mechanically exfoliated (ME) to isolate it as a single molecular layer. We will lay the groundwork required for fabricating field-effect transistors and address the effects that the material microstructure has on transistor properties by comparing the quality of ME-MoS2 to MoS2 grown by chemical vapor deposition (CVD-MoS2). The layer count and material quality will be analyzed using Raman spectroscopy, photoluminescence spectroscopy, and atomic force microscopy (AFM) mapping, after which the transistors will be built using e-beam lithography.
Distribution: Approved for public release
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Last Update / Reviewed: August 1, 2014