Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

Report No. ARL-TR-7210
Authors: Gregory K Ovrebo
Date/Pages: February 2015; 24 pages
Abstract: A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses.
Distribution: Approved for public release
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Last Update / Reviewed: February 1, 2015