Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers

Report No. ARL-TR-7209
Authors: Randy P Tompkins and Danh Nguyen
Date/Pages: February 2015; 22 pages
Abstract: This technical report examines sheet-resistance and Hall-effect results when using a Lehighton Electronics Inc. Model 1605B contactless mobility system. This report gives results on multiple samples including 4-inch, n-type Si; multiple AlGaN/GaN High Electron Mobility Transistor (HEMT) structures grown on SiC substrates; and an unintentionally doped (UID) GaN on sapphire template.
Distribution: Approved for public release
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Last Update / Reviewed: February 1, 2015