Raman Scattering from Tin

Report No. ARL-TR-7448
Authors: Patrick A Folkes, Patrick Taylor, Charles Rong, Barbara Nichols, Harry Hier, and Mikella Farrell
Date/Pages: September 2015; 18 pages
Abstract: We are investigating the use of Raman spectroscopy of tin as an analytical tool for discerning specific allotropic differences in ultra-thin tin films, and discerning differences between the tin and the growth substrates of interest. We have acquired spectra from barium difluoride (BaF2), crystalline silicon dioxide (SiO2), as well as ultra-thin tin semiconductor and tin metallic allotropes, and we are developing a fundamental understanding of the spectra. The research has identified that BaF2 is an excellent passivation layer for two-dimensional tin (stanene) that will enhance the resolution of the Raman spectrum of future tin layers and facilitate the molecular beam epitaxy (MBE) growth of stanene.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2015