Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures

Report No. ARL-TR-7473
Authors: Patrick A Folkes, Blair Connelly, Harry Hier, William Beck, and Brenda Van Mil
Date/Pages: September 2015; 16 pages
Abstract: A novel technique is used to determine the minority carrier lifetimes, interface recombination velocity, and radiative recombination constant from time-resolved photoluminescence measurements on a set of 3 molecular beam epitaxy (MBE)-grown gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs) double heterostructures (DHs) and published theory. This technique is used to determine that a distributed Bragg reflector between the substrate and the DHs increases the GaAs nonradiative lifetime. The fractional increase in the nonradiative lifetime varies with the MBE growth parameters.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2015