Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

Report No. ARL-TR-7542
Authors: Erik Enriquez, D Shreiber; SG Hirsch; C Hubbard; E Ngo; MW Cole
Date/Pages: December 2015; 40 pages
Abstract: An introductory overview of commonly employed deposition methods for strontium titanate (STO) thin films with previously achieved dielectric properties is presented. For the US Army Research LaboratoryĆ¢??s Gen 2 complex oxide metal organic chemical vapor deposition (MOCVD) system, STO thin films were grown on a platinized silicon substrate, Pt/TiO2/SiO2/Si, or PtSi. All STO films were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, and energy dispersive spectroscopy. Studies of mass flow rates and total gas flow rates were performed to investigate their respective roles in the resulting STO film characteristics. Our work demonstrated a significant increase in the quality of the optimized STO thin films with respect to STO films grown prior to the MOCVD hardware and growth parameter modifications. Optimized STO films had a tunability of 20%, a dielectric constant of 200, and loss tangent of less than 1% at 100 kHz.
Distribution: Approved for public release
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Last Update / Reviewed: December 1, 2015