Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

Report No. ARL-TR-7819
Authors: Justin R Bickford
Date/Pages: September 2016; 34 pages
Abstract: The fabrication and packaging of doped gallium arsenide (GaAs) photoconductive semiconductor switches with aluminum gallium arsenide (AlGaAs) capping layers are presented. The dopant-diffused contact regions and epitaxial capping layer are fabricated to investigate the advantages of both approaches. Devices were fabricated with various doping region device combinations (intrinsic, p/n, n/n, and p/p) to determine whether there is a device performance or processing freedom advantage to any of these cases.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2016