Design and Analysis of a 15-kV Package for Wide Bandgap Semiconductor Devices

Report No. ARL-TR-3225
Authors: Dimeji Ibitayo and C. Wesley Tipton
Date/Pages: May 2004; 18 pages
Abstract: The development of wide bandgap semiconductor materials such as silicon carbide (SiC) has made possible devices that exceed the voltage ratings of conventional component packaging schemes. As such, a new class of high voltage packages must be developed to realize the full potential of these technologies. We report on the electrostatic analysis and design of a 15-kV ceramic package using the ANSYS(footnote 1) Multiphysics software. To baseline our work, a standard ceramic package was characterized and modeled for high voltage operation. With this information, a new package geometry was designed, and additional SiC die requirements were identified via finite element simulations. (footnote 1)Not an acronym.
Distribution: Approved for public release
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Last Update / Reviewed: May 1, 2004