Broadband 0.25-μm Gallium Nitride (GaN) Power Amplifier Designs

Report No. ARL-TR-8091
Authors: John E Penn
Date/Pages: August 2017; 52 pages
Abstract: The US Army Research Laboratory is exploring devices and circuits for RF communications, networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high-power monolithic microwave integrated circuit amplifiers are extremely important in any communication system that must operate reliably and efficiently in continually crowded spectrums, with multiple purposes for communications, networking, and radar. This report describes the design of a broadband class A/B power amplifier using Qorvoâ??s 0.25-μm high-power efficient gallium nitride on a 4-mil silicon carbide process. This design was one of several submitted to a US Air Force Research Laboratoryâ??sponsored wafer fabrication.
Distribution: Approved for public release
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Last Update / Reviewed: August 1, 2017